PROJECT TITLE: Radiation effects on amorphous semiconductor oxides used for flexible and transparent microelectronics — REASOX
Coordinator: National Institute for Laser, Plasma and Radiation Physics
- Institute of Space Science (ISS)
- National Institute of Materials Physics
Period: 29 November 2013 – 28 November 2016
Project director: Valentin Craciun
- Craciun Valentin- CS I
- Socol Gabriel- CS I
- Craciun Doina- CS I
- Stefan Nicolaie- CS III
- Georgescu Geo- CS III
- Nita Cristina- ACS
- Ionita Anton- Teh
- Mogildea Marian- CS III
- Zgura Sorin- CS I
- Mogildea George- CS III
- Mingireanu Florin- CS III
- Jivanescu Iulia- CS
- Galca Aurelian-Catalin- CS III
- Pintilie Ioana- CS I
- Miclea Corneliu Florin- CS II
- Iuga Alin- CS III
- Besleaga Stan Cristina- CS
- Radu Roxana- ACS
- Trica Liliana Marinela-ACS
- Botea Mihaela- ACS
- Mihalcea Manda- teCh
Description: The effect of radiation (gamma, protons, and plasma bursts) on the properties of thin films of amorphous oxide semiconductors (AOS) used for flexible and transparent electronics will be studied.
In the second stage of the research the AOS films will be incorporated in devices such as Schottky diodes, metal oxide semiconductor (MOS) capacitors and thin films transistors to evaluate the effect of radiation on devices characteristics, surface, interface and bulk states, and energy bands offsets.
Bursts of highly ionized particles-high velocity expanding plasmas generated by specific targets irradiation with pulses from the 1 PW fs laser recently installed in the NILPRP will be used to irradiate electronic circuits containing AOS-based devices to simulate the effect of the solar wind on their behavior.
This project will provide useful data, scientific insight, and a better understanding into the effects of radiation on AOS-based devices that could be used for outer space applications.
Project objectives: The main objective of this project is to understand the behavior of AOS materials under irradiation by proton and gamma radiation, as well as simulated solar wind, and how the defects created by the various type of radiation and doses affect the characteristics of AOS-based devices.
1. Designing of experimental setups
- 1.1 High quality oxide targets for PLD experiments
2. Selection of the best AOS films in respect with the tolerance at the irradiation
- 2.1 High quality AOS films
- 2.2 Defects characterizations generated by irradiation of the AOS films
3. Radiation effects on AOS-based devices: MOS capacitors and Schottky diodes
- 3.1 Fabrication of mos capacitors and Schottky diodes based on AOS films
- 3.2 Evaluation of electrical parameters variation due to the irradiation with protons, gamma radiation and alpha particles
4. Studies about irradiation effects in circuits containing AOS based devices
- 4.1 Fabrication of TFT devices based on AOS films
- 4.2 Evaluation of the electrical parameters variation due to irradiation with protons, gamma radiation and alpha particles
Contributions to the STAR programme objectives: synthesis of new and better materials for space exploration and their characterization is a research niche that we have clearly identified studies regarding the effect of radiation on semiconductor materials and devices.