The proposed activity aims to design and test a prototype of an LNA (Low Noise Amplifier) working from 37.4 GHz to 42.5 GHz for gateway application, based on European monolithic microwave integrated circuit technology. Targeted Improvements: performance willbe improved by the use of an enhanced semiconductor technology e.g. GaAs or InP HEMT (High-Electron-Mobility Transistor), and also by reducing the losses to the waveguide by direct transition from chip to waveguide. This will reduce the expected noise figurebelow 2.0 dB, resulting in improved availability of the link or a reduction of traveling wave tube power on board. For the fulldescriptionof this activity, please consult the telecom website: http://telecom.esa.int/telecom – ‘current and future tenders’. Procurement Policy: C(2) = A relevant participation (in terms of quality and quantity) of non-primes (incl. SMEs) is required. For additional information please go to EMITS news “Industrial Policy measures for non-primes, SMEs and R&D entities in ESA programmes”.
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