LOW NOISE AMPLIFIER (LNA) AT 600 GIGAHERTZ (GHZ)
28, April 2020

ESA Open Invitation to Tender AO10103
Open Date: 20/04/2020
Closing Date: 15/06/2020 13:00:00

Status: ISSUED
Reference Nr.: 19.1ET.35
Prog. Ref.: Technology Developme
Budget Ref.: E/0901-01 – Technology Developme
Special Prov.: BE+DK+FR+DE+IT+NL+ES+SE+CH+GB+IE+AT+NO+FI+PT+GR+LU+CZ+RO+PL+EE+HU
Tender Type: C
Price Range: > 500 KEURO
Products: Satellites & Probes / Payloads / Instruments / RF and microwave Instruments / Microwave radiometers
Technology Domains: RF Systems, Payloads and Technologies / RF Technologies and Equipment / RF Equipment
Establishment: ESTEC
Directorate: Directorate of Tech, Eng. & Quality
Department: Electrical Department
Division: RF Payloads & Technology Division
Contract Officer: Erkelens-Sickinger, Franziska
Industrial Policy Measure: C1 – Activities in open competition limited to the non-Larg…
Last Update Date: 20/04/2020
Update Reason: Tender issue

Advancements in semiconductor technologies like INP and MHEMT have made low-noise amplifiers (LNA) possible for increasingly higherfrequencies. Currently efforts are taken to reach frequencies close to 1 THz. Aggressive reduction of the gate length has been essential in this progress, but is becoming less effective with gate lengths approaching 30 nm scale. New technological approaches are needed to reach thz frequencies. New material systems are being investigated, especially those based on antimonides. Another approachis to improve the charge control with novel device geometries like with Double Gate structures. Availability of lnas at sub-mm waves above 600 ghz is interesting for future space-borne radiometers for Earth observation for two reasons: Firstly, employment of a low-noise pre-amplifier in front of a Schottky mixer allows improvement in receiver sensitivity. Secondly, lnas make direct-detection radiometers possible, allowing significant simplification of the receiver architecture, as no local oscillator would be needed. The activity starts with technology investigations and process experiments with the aim to demonstrate at transistor level that the performance expected of the final LNA demonstrators is achievable. Initial development with process experiments and measurements on testcircuits shall be conducted, including the gathering of modelling data. The subsequent tasks consist of the design, fabrication andinitial test of the LNA MMICs using the two technological approaches. Following the testing of the MMICs at chip level, the two LNADemonstrators will be assembled into waveguide packages and tested.Procurement Policy: C(1) = Activity restricted to non-prime contractors (incl. SMEs). For additional information please go to EMITS news “Industrial Policy measures for non-primes, SMEs and RD entities in ESA programmes”.

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