22, December 2017

ESA Open Invitation to Tender AO9170
Open Date: 20/12/2017
Closing Date: 16/02/2018 13:00:00

Status: ISSUED
Reference Nr.: 17.129.04
Prog. Ref.: GSTP Element 1 Dev
Budget Ref.: E/0904-611 – GSTP Element 1 Dev
Special Prov.: FI
Tender Type: C
Price Range: 200-500 KEURO
Products: Satellites & Probes / Electronics / EEE Components / Optoelectronic Devices (including opto-couplers, LED, CCDs, displays, sensors)
Techology Domains: Optoelectronics / Detector Technologies / UV, X-ray & Gamma-Ray Detectors
Establishment: ESTEC
Directorate: Directorate of Tech, Eng. & Quality
Department: Mechanical Engineering Department
Division: Mechatronics and Optics Division
Contract Officer: Strzelecki, Patryk Michal
Industrial Policy Measure: N/A – Not apply
Last Update Date: 20/12/2017
Update Reason: Tender issue

The objective of this activity is to transfer black silicon surface treatment to existing photodiodes and silicon drift detectors.In the recent years, light trapping by nanostructured surface has been successfully applied to solar cells, resulting in excellent performance devices. This technology, in combination with other modifications, has been already proven to be beneficial for silicon photodiode devices. The nanostructure advantages are: a longer optical path, a wider acceptance angle and a close to zero surface reflection. All these characteristics will provide devices with superior performances.This activity encompasses the following tasks: transfer of the black silicon technology to existing photodiode and silicon drift detectors, electro-optical performance evaluation to compare standard process and the new technology, qualification campaign for environmental testing following the ESCC 9020 generic especification, radiation campaign to assess radiation hardness of the new technology. The expected deliverables are the devices procured during the activity with the new surface technology transfer

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