MIXED SIGNAL GAN MMIC PROCESS DEMONSTRATION – EXPRO PLUS
28, februarie 2022

ESA Open Invitation to Tender: 1-11260
Open Date: 25/02/2022 15:30 CEST
Closing Date: 08/04/2022 13:00 CEST

GaN-based Microwave Monolithic Integrated Circuit (MMIC) processes are currently available from different European foundries for microwave applications. All of these are based on depletion mode (normally on) high-electron-mobility transistors (HEMT).Development of enhancement (normally off) mode transistors and integrating them on a GaN MMIC manufacturing process will enable monolithic integration of digital functions to micro- and millimeter wave circuit designs while still maintaining the performance benefits of GaN (high ft, high output power, high breakdown voltage, high temperature operation, etc.) compared to other mixed signal technologies. Possible applications include e.g. Single Chip Front End (SCFE) GaN MMICs with more sophisticated Tx/Rx controls than currently possible and GaN Core Chips with Serial Input Parallel Output (SIPO) interface.This activity encompasses the following tasks:- Identification of enhancement mode GaN HEMT technology suitable for integration on a existing GaN MMIC foundry process- Process development and demonstration of manufacturability of monolithically integrated E/D-Mode devices- Design, manufacturing and test of a mixed signal circuit demonstratorPending on the successful outcome of the activity, next steps will be industrialisation and space evaluation of the technologyProcurement Policy: C(1) = Activity restricted to non-prime contractors (incl. SMEs). For additional information please go to this link.

Directorate: Directorate of Tech, Eng. Quality
Estabilishment: ESTEC
ECOS Required: No
Classified: No
Price Range: 200-500 KEURO
Authorised Contact Person: Franziska Isabella Erkelens-Sickinger
Initiating Service: TEC-EDC
IP Measure: C1
Prog. Reference: E/0901-01 – Technology Developme
Tender Type: Open Competition
Open To Tenderers From: AT+BE+CH+CZ+DE+DK+EE+EL+ES+FI+FR+GB+HU+IE+IT+LU+NL+NO+PL+PT+RO+SE
Technology Keywords: 23-B-III-RF Microwave and Millimetre Wave Components / 23-B-VII-Wide Band Gap Technologies
Products Keywords: 2-B-1-h-Monolithic Microcircuits (including MMICs)

If you wish to access the documents related to the Invitation to Tender, you have to log in to the ESA Portal.